{"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0},
{"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0},
{"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0},
{"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0},
{"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 8-bit", 0x39, 512, 128, 0x4000, 0},
{"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0},
{"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 1,8V 16-bit", 0x49, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 128MiB 3,3V 16-bit", 0x59, 512, 128, 0x4000, NAND_BUSWIDTH_16},
{"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0},
/*
* These are the new chips with large page size. The pagesize and the
* erasesize is determined from the extended id bytes
*/
#define LP_OPTIONS (NAND_SAMSUNG_LP_OPTIONS | NAND_NO_READRDY | NAND_NO_AUTOINCR)
#define LP_OPTIONS16 (LP_OPTIONS | NAND_BUSWIDTH_16)
/*512 Megabit */
{"NAND 64MiB 1,8V 8-bit", 0xA2, 0, 64, 0, LP_OPTIONS},
{"NAND 64MiB 3,3V 8-bit", 0xF2, 0, 64, 0, LP_OPTIONS},
{"NAND 64MiB 1,8V 16-bit", 0xB2, 0, 64, 0, LP_OPTIONS16},
{"NAND 64MiB 3,3V 16-bit", 0xC2, 0, 64, 0, LP_OPTIONS16},
/* 1 Gigabit */
{"NAND 128MiB 1,8V 8-bit", 0xA1, 0, 128, 0, LP_OPTIONS},
{"NAND 128MiB 3,3V 8-bit", 0xF1, 0, 128, 0, LP_OPTIONS},
{"NAND 128MiB 1,8V 16-bit", 0xB1, 0, 128, 0, LP_OPTIONS16},
{"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, LP_OPTIONS16},
/* 2 Gigabit */
{"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, LP_OPTIONS},
{"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, LP_OPTIONS},
{"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, LP_OPTIONS16},
{"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, LP_OPTIONS16},
/* 4 Gigabit */
{"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, LP_OPTIONS},
{"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, LP_OPTIONS},
{"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, LP_OPTIONS16},
{"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, LP_OPTIONS16},
/* 8 Gigabit */
{"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, LP_OPTIONS},
{"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, LP_OPTIONS},
{"NAND 1GiB 1,8V 16-bit", 0xB3, 0, 1024, 0, LP_OPTIONS16},
{"NAND 1GiB 3,3V 16-bit", 0xC3, 0, 1024, 0, LP_OPTIONS16},
/* 16 Gigabit */
{"NAND 2GiB 1,8V 8-bit", 0xA5, 0, 2048, 0, LP_OPTIONS},
{"NAND 2GiB 3,3V 8-bit", 0xD5, 0, 2048, 0, LP_OPTIONS},
{"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, LP_OPTIONS16},
{"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, LP_OPTIONS16},
/*
* Renesas AND 1 Gigabit. Those chips do not support extended id and
* have a strange page/block layout ! The chosen minimum erasesize is
* 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page
* planes 1 block = 2 pages, but due to plane arrangement the blocks
* 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7 Anyway JFFS2 would
* increase the eraseblock size so we chose a combined one which can be
* erased in one go There are more speed improvements for reads and
* writes possible, but not implemented now
*/
{"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000,
NAND_IS_AND | NAND_NO_AUTOINCR |NAND_NO_READRDY | NAND_4PAGE_ARRAY |
BBT_AUTO_REFRESH
},
{NULL,}
};
每行的16进制数就是相应nandflash的ID号 确实没16,这里说明一下在uboot 2008.10版本有两个关于struct nand_flash_dev nand_flash_ids[] = {的定义
而如何知道 if (dev_id == nand_flash_ids[i].id)语句中的nand_flash_ids的定义就是drivers/mtd/nand/nand_ids.c文件里的呢,我们可以在
for (i = 0; nand_flash_ids[i].name != NULL; i++) {
if (dev_id == nand_flash_ids[i].id) {
printf("%s",nand_flash_ids[i].name );//打印nand_flash_ids结构体name成员，
type = &nand_flash_ids[i];
break;
另一个nand_flash_ids的定义为
static struct nand_flash_dev nand_flash_ids[] = {
{"Toshiba TC5816BDC", NAND_MFR_TOSHIBA, 0x64, 21, 1, 2, 0x1000, 0},
{"Toshiba TC5832DC", NAND_MFR_TOSHIBA, 0x6b, 22, 0, 2, 0x2000, 0},
{"Toshiba TH58V128DC", NAND_MFR_TOSHIBA, 0x73, 24, 0, 2, 0x4000, 0},
{"Toshiba TC58256FT/DC", NAND_MFR_TOSHIBA, 0x75, 25, 0, 2, 0x4000, 0},
{"Toshiba TH58512FT", NAND_MFR_TOSHIBA, 0x76, 26, 0, 3, 0x4000, 0},
{"Toshiba TC58V32DC", NAND_MFR_TOSHIBA, 0xe5, 22, 0, 2, 0x2000, 0},
{"Toshiba TC58V64AFT/DC", NAND_MFR_TOSHIBA, 0xe6, 23, 0, 2, 0x2000, 0},
{"Toshiba TC58V16BDC", NAND_MFR_TOSHIBA, 0xea, 21, 1, 2, 0x1000, 0},
{"Toshiba TH58100FT", NAND_MFR_TOSHIBA, 0x79, 27, 0, 3, 0x4000, 0},
{"Samsung KM29N16000", NAND_MFR_SAMSUNG, 0x64, 21, 1, 2, 0x1000, 0},
{"Samsung unknown 4Mb", NAND_MFR_SAMSUNG, 0x6b, 22, 0, 2, 0x2000, 0},
{"Samsung KM29U128T", NAND_MFR_SAMSUNG, 0x73, 24, 0, 2, 0x4000, 0},
{"Samsung KM29U256T", NAND_MFR_SAMSUNG, 0x75, 25, 0, 2, 0x4000, 0},
{"Samsung unknown 64Mb", NAND_MFR_SAMSUNG, 0x76, 26, 0, 3, 0x4000, 0},
{"Samsung KM29W32000", NAND_MFR_SAMSUNG, 0xe3, 22, 0, 2, 0x2000, 0},
{"Samsung unknown 4Mb", NAND_MFR_SAMSUNG, 0xe5, 22, 0, 2, 0x2000, 0},
{"Samsung KM29U64000", NAND_MFR_SAMSUNG, 0xe6, 23, 0, 2, 0x2000, 0},
{"Samsung KM29W16000", NAND_MFR_SAMSUNG, 0xea, 21, 1, 2, 0x1000, 0},
{"Samsung K9F5616Q0C", NAND_MFR_SAMSUNG, 0x45, 25, 0, 2, 0x4000, 1},
{"Samsung K9K1216Q0C", NAND_MFR_SAMSUNG, 0x46, 26, 0, 3, 0x4000, 1},
{"Samsung K9F1G08U0M", NAND_MFR_SAMSUNG, 0xf1, 27, 0, 2, 0, 0},
{NULL,}
};
而打印结果为